Ultrafast Carbon Nanotube Photodetectors with Bandwidth over 60 GHz

The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, compatible integration process silicon complementary metal-oxide-semiconductor (CMOS) technology. Here, we demonstrate a CMOS-compatible carbon nanotube (CNT) that exhibits responsivity, bandwidth broad spectral operation over all optical telecommunication band based on high-purity CNT arrays. ultrafast demonstrates 100 Gbit/s Nyquist-shaped on-off-keying (OOK) signal transmission, which can address demand for high-speed interconnects between data centers. Furthermore, 60 GHz by scaling down active area to 20 {\mu}m2. As photodetectors are fabricated doping-free process, it also provides cost-effective solution integrate photonic devices CNT-based CMOS integrated circuits. Our work paves way optoelectronic circuits (OEICs).